vishay siliconix SUM33N20-60P new product document number: 74291 s-62209-rev. a, 30-oct-06 www.vishay.com 1 n-channel 200-v (d-s) 175 c mosfet features ? trenchfet ? power mosfets ? 150 c junction temperature ? 100 % uis and r g tested applications ? power supply ? lighting ? industrial product summary v (br)dss (v) r ds(on) ( )i d (a) q g (typ) 200 0.059 at v gs = 15 v 33 53 0.060 at v gs = 10 v 33 t o -26 3 s d g top view orderin g information: s um 33 n20-60p-e 3 (le a d (p b )-free) n-channel mosfe t g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 200 v gate-source voltage v gs 25 continuous drain current (t j = 175 c) t c = 25 c i d 33 a t c = 100 c 20.8 pulsed drain current i dm 80 single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy a e as 20 mj maximum power dissipation a t c = 25 c p d 156 b w t a = 25 c c 3.12 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.8 rohs compliant
www.vishay.com 2 document number: 74291 s-62209-rev. a, 30-oct-06 vishay siliconix SUM33N20-60P notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 200 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 0 v, v gs = 25 v 300 zero gate voltage drain current i dss v ds = 200 v, v gs = 0 v 1 a v ds = 200 v, v gs = 0 v, t j = 100 c 25 v ds = 200 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 40 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.049 0.060 v gs = 15 v, i d = 20 a 0.0485 0.059 v gs = 10 v, i d = 20 a, t j = 100 c 0.110 v gs = 10 v, i d = 20 a, t j = 150 c 0.144 forward transconductance a g fs v ds = 15 v, i d = 20 a 25 s dynamic b input capacitance c iss v gs = 0 v, v ds = 25 v, f = 1 mhz 2735 pf output capacitance c oss 271 reverse transfer capacitance c rss 117 total gate charge c q g v ds = 100 v, v gs = 15 v, i d = 50 a 75 113 nc v ds = 100 v, v gs = 10 v, i d = 50 a 53 80 gate-source charge c q gs 14 gate-drain charge c q gd 17.5 gate resistance r g f = 1 mhz 1.2 1.8 tu r n - o n d e l ay t i m e c t d(on) v dd = 100 v, r l = 2 i d ? 50 a, v gen = 10 v, r g = 1 16 25 ns rise time c t r 170 260 turn-off delay time c t d(off) 26 40 fall time c t f 918 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 33 a pulsed current i sm 80 forward voltage a v sd i f = 20 a, v gs = 0 v 0.86 1.5 v reverse recovery time t rr i f = 40 a, di/dt = 100 a/s 114 170 ns peak reverse recovery current i rm(rec) 812a reverse recovery charge q rr 0.46 0.69 c reverse recovery fall time t a 82 ns reverse recovery rise time t b 32
document number: 74291 s-62209-rev. a, 30-oct-06 www.vishay.com 3 vishay siliconix SUM33N20-60P typical characteristics 25 c, unless noted output characteristics transconductance on-resistance vs. gate-to-source voltage 0 20 40 60 8 0 100 0 3 6 9 12 15 v g s = 15, 12, 10, 8 , 6 v 5 v v d s - dr a in-to- s o u rce volt a ge (v) ) a ( t n e r r u c n i a r d - i d 0 20 40 60 8 0 100 120 01020 3 0405060 25 c tr a n s cond u ct a nce ( s ) - g s f i d - dr a in c u rrent (a) t c = - 55 c 125 c 0.04 0.07 0.10 0.1 3 0.16 0.19 0 3 6 9 12 15 i d = 20 a on-re s i s t a nce ( ) - v g s - g a te-to- s o u rce volt a ge (v) r s (on) d 125 c 25 c transfer characteristics on-resistance vs. drain current capacitance 0 16 3 2 4 8 64 8 0 0246 8 10 25 c t c = 125 c - 55 c v g s - g a te-to- s o u rce volt a ge (v) ) a ( t n e r r u c n i a r d - i d i d - dr a in c u rrent (a) 0.040 0.050 0.060 0.070 0.0 8 0 016 3 24 8 64 8 0 re s i s t a nce ( ) - n o - r ) n o ( s d g s = 10 v v g s = 15 v v 0 760 1520 22 8 0 3 040 38 00 0204060 8 0 100 v d s - dr a in-to- s o u rce volt a ge (v) c - c a p a cit a nce (pf) c r ss c o ss c i ss
www.vishay.com 4 document number: 74291 s-62209-rev. a, 30-oct-06 vishay siliconix SUM33N20-60P typical characteristics 25 c, unless noted gate charge source-drain diode forward voltage drain source breakdown vs. junction temperature 0 3 6 9 12 15 016 3 24 8 64 8 0 v d s = 50 v, 100 v, 150v i d = 50 a volt a ge (v) e c r u o s - o t - e t a g - q g - tot a l g a te ch a rge (nc) v s g v s d - s o u rce-to-dr a in volt a ge - s o u rce c u rrent (a) i s 100 10 0.001 0.0 0.2 0.4 1.2 1 0.1 0.01 0. 8 1.0 0.6 =150 c t j = 25 c t j 190 200 210 220 2 3 0 240 250 - 50 - 25 0 25 50 75 100 125 150 175 i d = 10 ma t j - j u nction temper a t u re (c) v (br)d ss (norm a lized) on-resistance vs. junction temperature threshold voltage single pulse avalanche current capability vs. time 0.4 0.9 1.4 1.9 2.4 2.9 - 50 - 25 0 25 50 75 100 125 150 175 v g s = 10 v t j - j u nction temper a t u re (c) r ) n o ( s d re s i s t a nce - n o - ) d e z i l a m r o n ( v g s = 15 v i d = 20 a - 2. 3 - 1. 8 - 1. 3 - 0. 8 - 0. 3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 i d = 5 ma ) v ( e c n a i r a v v ) h t ( s g t j - temper a t u re (c) i d = 250 a 150 c 25 c t a v -( s ec) a i d a v 100 10 1 0.0001 0.001 0.01 0.1 0.00001
document number: 74291 s-62209-rev. a, 30-oct-06 www.vishay.com 5 vishay siliconix SUM33N20-60P thermal ratings vishay siliconix maintains worldwide manufac turing capability. products ma y be manufactured at one of several qualified locatio ns. reliability data for silicon tech- nology and package reliability represent a composite of all qua lified locations. for related documents such as package/tape dra wings, part marking, and reliability data, see http://www.vishay.com/ppg?74291 maximum drain curent vs. case temperature 0 8 16 24 3 2 40 0 25 50 75 100 125 150 t c - c as e temper a t u re (c) ) a ( t n e r r u c n i a r d - i d safe operating area *limited b y r d s (on) t c = 25 c s ingle p u l s e 10 m s 100 s 1 m s 100 m s dc 100 10 0.1 1 10 1000 - dr a in c u rrent (a) i d 1 100 0.1 v d s -dr a in-to- s o u rce volt a ge (v) *v g s minim u m v g s a t which r d s (on) i ss pecified > normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 1 0.1 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 normalized effective t ransient thermal impedance 0.2 0.1 duty cycle = 0.5 single pulse 0.05 0.02
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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